Infineon BSC252N10NSFG: High-Performance OptiMOS™ Power MOSFET for Efficient Power Conversion

In the realm of modern power electronics, achieving higher efficiency, power density, and reliability is paramount. The Infineon BSC252N10NSFG stands out as a premier solution, engineered to meet these demanding requirements. As part of Infineon's renowned OptiMOS™ family, this N-channel power MOSFET is designed to deliver exceptional performance in a wide array of power conversion applications.

A key strength of the BSC252N10NSFG lies in its outstanding efficiency metrics. Built on advanced silicon technology, it features an extremely low on-state resistance (R DS(on)) of just 2.5 mΩ (max) at 10 V. This minimal resistance directly translates to reduced conduction losses, which is critical for improving overall system efficiency, especially in high-current applications. Whether it's used in the primary stage of a switch-mode power supply (SMPS) or in a synchronous rectification circuit, this device ensures that more power is delivered to the load and less is wasted as heat.

Furthermore, the device is characterized by its superior switching performance. The low gate charge (Q G ) and figure of merit (FOM) ensure fast switching transitions, which are essential for high-frequency operation. This capability allows designers to push switching frequencies higher, enabling the use of smaller passive components like inductors and capacitors. The result is a significant increase in power density, allowing for more compact and lighter end-products without compromising performance.

The BSC252N10NSFG is rated for a drain-source voltage (V DS) of 100 V and a continuous drain current (I D ) of 100 A, making it an exceptionally robust component suited for demanding environments. It is an ideal choice for applications such as:

Server and Telecom Power Supplies: Where efficiency standards like 80 Plus Titanium are mandatory.

Industrial Motor Drives and Control: Requiring robust operation and high reliability.

Solar Inverters and Energy Storage Systems: Demanding high efficiency to maximize energy harvest.

Synchronous Rectification: In DC-DC converters for computing and consumer electronics.

Packaged in the space-saving SuperSO8, the BSC252N10NSFG also excels in thermal performance. The package offers a very low thermal resistance, ensuring that heat is effectively dissipated from the silicon die. This superior thermal management is crucial for maintaining device reliability under continuous high-load conditions and in high-ambient-temperature environments.

ICGOO In summary, the Infineon BSC252N10NSFG OptiMOS™ power MOSFET is a high-performance semiconductor device that sets a benchmark for efficiency and power density. Its combination of ultra-low R DS(on), excellent switching characteristics, and robust thermal performance makes it a top-tier choice for engineers aiming to optimize their next-generation power conversion designs.

Keywords: OptiMOS™, Power MOSFET, Efficient Power Conversion, Low RDS(on), High Power Density