Infineon IPG16N10S4L61AATMA1: A High-Performance OptiMOS 6 Power MOSFET for Efficient Switching Applications
The relentless pursuit of higher efficiency and power density in modern electronics drives the continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon's OptiMOS™ 6 family, and the IPG16N10S4L61AATMA1 stands as a prime example of its advanced capabilities. This 100V N-channel power MOSFET is engineered to set new benchmarks in performance for a wide array of switching applications, from server and telecom power supplies to industrial motor drives and battery management systems.
A key differentiator of the OptiMOS™ 6 technology is its exceptional balance between ultra-low static and switching losses. The IPG16N10S4L61AATMA1 boasts an impressively low maximum on-state resistance (R DS(on)) of just 1.6 mΩ at 10 V. This minimal resistance directly translates to reduced conduction losses, allowing for higher efficiency operation and lower heat generation, which is critical for improving thermal management and system reliability.
Furthermore, this MOSFET is designed for high-frequency operation. Its optimized internal structure ensures superior switching performance with very low gate charge (Qg) and reduced reverse recovery charge (Qrr). These characteristics are paramount for minimizing switching losses, especially in hard-switching topologies like buck converters, half-bridges, and full-bridges. Designers can leverage this to increase the switching frequency of their power supplies, enabling the use of smaller passive components such as inductors and capacitors, thereby significantly boosting overall power density.
The device also features a robust and reliable body diode with soft reverse recovery characteristics. This is essential for applications involving inductive loads or in bridge circuits where the body diode conducts during dead time, preventing voltage spikes and ensuring smooth, stable operation. The IPG16N10S4L61AATMA1 is offered in the space-saving, thermally efficient D²PAK (TO-263) package, which provides excellent power dissipation and is well-suited for automated assembly processes.
ICGOOODFIND: The Infineon IPG16N10S4L61AATMA1 encapsulates the pinnacle of power MOSFET design, offering a compelling combination of minimal conduction losses, fast switching speed, and high robustness. It is an optimal choice for engineers aiming to push the boundaries of efficiency and power density in their next-generation power conversion systems.
Keywords: Power MOSFET, OptiMOS 6, Switching Efficiency, R DS(on), Power Density
