Infineon BFR93AWH6327XTSA1 NPN Silicon RF Transistor: Key Features and Applications

Release date:2025-10-31 Number of clicks:175

Infineon BFR93AWH6327XTSA1 NPN Silicon RF Transistor: Key Features and Applications

The Infineon BFR93AWH6327XTSA1 is a high-performance NPN silicon radio frequency (RF) transistor designed for a wide range of small-signal amplification applications. Packaged in a SOT-343 (SC-70) surface-mount device (SMD), this component is optimized for high-frequency operation, making it a crucial building block in modern RF circuits. Its combination of high gain, low noise, and excellent power efficiency makes it a preferred choice for designers working in the GHz frequency range.

Key Features

A primary feature of this transistor is its exceptional high-frequency capability, with a transition frequency (fT) of 6 GHz. This allows it to operate effectively in very high-frequency (VHF), ultra-high-frequency (UHF), and low microwave bands. It offers a low noise figure, which is critical for amplifying weak signals without significantly degrading the signal-to-noise ratio in sensitive receiver front-ends. Furthermore, the device provides high amplification (high gain), ensuring that even minute input signals are boosted sufficiently for subsequent processing stages.

The SOT-343 package is renowned for its miniature footprint, which is essential for the dense PCB layouts found in today's compact consumer electronics and communication modules. This small form factor does not come at the expense of performance, as the device is engineered for reliable operation and good thermal characteristics.

Primary Applications

The BFR93AWH6327XTSA1 is versatile and finds use in numerous applications where high-frequency signal amplification is required. Key application areas include:

Cellular Infrastructure: It is used in low-noise amplifier (LNA) circuits for base stations and cellular repeaters, where it helps to amplify faint signals from mobile devices with minimal added noise.

Wireless Communication Systems: The transistor is ideal for use in Wi-Fi routers, Bluetooth modules, and other ISM band devices operating at 2.4 GHz and 5 GHz, serving as a driver or pre-amplifier stage.

Broadcast Systems: It is employed in VHF/UHF television and radio broadcast transmitters and receivers for signal amplification.

General Purpose RF Amplification: Its characteristics make it suitable for oscillators, mixers, and impedance matching circuits in a vast array of industrial, scientific, and medical (ISM) equipment.

ICGOOODFIND: The Infineon BFR93AWH6327XTSA1 stands out as a highly reliable and efficient solution for high-frequency amplification. Its blend of high gain, low noise, and a compact SMD package makes it an indispensable component for engineers designing advanced RF systems in telecommunications, networking, and broadcasting.

Keywords: RF Transistor, Low Noise Amplifier (LNA), High Frequency, SOT-343, Small Signal Amplification.

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