Infineon BSC019N08NS5ATMA1 OptiMOS 5 Power MOSFET: Datasheet Analysis and Application Review

In the realm of power electronics, the quest for higher efficiency, power density, and reliability is unending. Infineon Technologies' OptiMOS™ 5 power MOSFET families stand at the forefront of this pursuit, and the BSC019N08NS5ATMA1 is a prime example of the advanced technology packed into a small footprint. This article provides a detailed analysis of its datasheet and reviews its key application scenarios.

Datasheet Analysis: Decoding the Key Parameters

The BSC019N08NS5ATMA1 is an N-channel MOSFET built on Infineon's state-of-the-art OptiMOS™ 5 superjunction technology. It is housed in a compact, low-inductance PG-TDSON-8 (5x6) package, making it ideal for space-constrained designs.

The most striking specification is its extremely low maximum on-state resistance (RDS(on)) of just 1.9 mΩ at a gate-source voltage (VGS) of 10 V. This ultra-low resistance is the cornerstone of its performance, as it directly translates to minimal conduction losses. When a high current flows through the MOSFET, the power dissipated as heat (I²R) is drastically reduced, leading to significantly higher efficiency. This parameter is measured at a junction temperature (Tj) of 25°C, and designers must account for its positive temperature coefficient.

The device is rated for a drain-source voltage (VDS) of 80 V, positioning it perfectly for a wide range of industrial and consumer applications, including 48V input systems, motor controls, and DC-DC converters. The continuous drain current (ID) is rated at 100 A at a case temperature (Tc) of 25°C, showcasing its impressive current-handling capability in a small package.

Furthermore, the OptiMOS™ 5 technology boasts exceptional switching performance. The figures of merit, such as gate charge (QG(total) ~115 nC) and figure-of-merit (FOM, RDS(on) QG), are optimized. This results in faster switching speeds and lower switching losses, which is critical for high-frequency operation in switch-mode power supplies (SMPS).

Application Review: Where It Excels

The combination of low RDS(on), high current capability, and fast switching makes the BSC019N08NS5ATMA1 a versatile component for demanding applications.

1. Synchronous Rectification in DC-DC Converters: In buck, boost, or buck-boost converters, especially for telecom and server power supplies, this MOSFET is an ideal candidate for the synchronous rectifier (low-side) switch. Its low RDS(on) minimizes the voltage drop during the freewheeling phase, directly boosting the overall converter efficiency.

2. Motor Drive and Control: For 48V brushless DC (BLDC) motor drives in industrial automation, robotics, or e-mobility, this MOSFET can be used in the inverter bridge. Its high current rating allows it to deliver significant power to the motor, while its fast switching enables precise PWM control for smooth and efficient operation.

3. High-Current Switching Circuits: Any application requiring the switching of high currents, such as solid-state relays, battery management systems (BMS), and active load switches, can benefit from its low conduction losses, which reduce thermal stress and improve system reliability.

Thermal and Layout Considerations

While the component itself is highly efficient, its performance is ultimately realized through good PCB design. The PG-TDSON-8 package features an exposed thermal pad that must be properly soldered to a sufficient copper area on the PCB to act as a heatsink. Effective thermal management is crucial to prevent thermal runaway and ensure the device operates within its specified junction temperature range of -55°C to +175°C.

ICGOOODFIND

The Infineon BSC019N08NS5ATMA1 OptiMOS™ 5 MOSFET sets a high bar for performance in its class. Its industry-leading low RDS(on) and excellent switching characteristics make it a superior choice for designers aiming to push the limits of efficiency and power density. While its performance is outstanding, successful implementation hinges on a robust PCB layout and thermal management strategy to fully leverage its capabilities.

Keywords:

OptiMOS 5

Low RDS(on)

Power Efficiency

Synchronous Rectification

Thermal Management