Infineon IPD30N06S2L23ATMA3 N-Channel MOSFET: Datasheet, Pinout, and Application Circuit Guide
The Infineon IPD30N06S2L23ATMA3 is a state-of-the-art N-Channel power MOSFET designed using Infineon's proprietary OptiMOS™ power transistor technology. This technology is renowned for delivering an exceptional combination of high efficiency, high power density, and robust performance. This MOSFET is engineered for a wide range of low-voltage switching applications, making it a popular choice among designers in the automotive, industrial, and consumer electronics sectors.
This guide provides a detailed overview of its key specifications, pinout configuration, and a practical application circuit to help you integrate this component effectively into your designs.
Datasheet Overview and Key Specifications
The datasheet for the IPD30N06S2L23ATMA3 reveals its capabilities as a logic-level MOSFET, meaning it can be fully switched on with a gate-to-source voltage (V_GS) as low as 4.5 V, simplifying drive circuitry, especially in microcontroller-based systems.
Some of its most critical electrical characteristics include:
Drain-to-Source Voltage (V_DS): 60 V
Continuous Drain Current (I_D): Up to 30 A at a case temperature (T_C) of 25°C.
On-Resistance (R_DS(on)): A remarkably low 23 mΩ (max) at V_GS = 10 V. This low resistance is the key to minimizing conduction losses and improving overall system efficiency.
Gate Threshold Voltage (V_GS(th)): Typically 2.35 V
Package: Housed in a SuperSO8 (PG-TSDSO-8) package. This surface-mount package offers an excellent power-to-size ratio and superior thermal performance compared to standard SO-8 packages.
Pinout Configuration
The IPD30N06S2L23ATMA3 comes in an 8-pin SuperSO8 package. Its pinout is designed for optimal electrical and thermal performance. The pins are arranged as follows:
Pins 1, 2, 5, 6, 7, 8: These are all internally connected to the Drain (D) terminal. This multi-pin design significantly reduces the package's lead resistance and inductance while providing an effective path for heat dissipation away from the silicon die.
Pin 3: This is the Gate (G) terminal. It is the control pin used to switch the MOSFET on and off.
Pin 4: This is the Source (S) terminal. It is the common return path for both the drain current and the gate drive current.
Application Circuit Guide: A Basic Switch
A fundamental application for this MOSFET is as a high-side or low-side switch to control a load, such as a DC motor, solenoid, or high-power LED strip. Below is a guide for a low-side switch configuration, commonly used with microcontrollers.
Components Required:
Microcontroller (e.g., Arduino, PIC, STM32)
Infineon IPD30N06S2L23ATMA3 MOSFET
Load (e.g., a 12V DC Motor)
Flyback Diode (e.g., 1N5819 or similar Schottky diode)
Gate resistor (e.g., 10Ω to 100Ω)
Pull-down resistor (e.g., 10 kΩ)
Circuit Operation:
1. Connections: Connect the drain (D) of the MOSFET to one terminal of the load. Connect the other terminal of the load to your positive power supply (e.g., 12V). Connect the source (S) of the MOSFET directly to ground.
2. Gate Driving: Connect the microcontroller's digital output pin to one end of the gate resistor (10Ω). Connect the other end of this resistor to the gate (G) pin of the MOSFET. The pull-down resistor (10 kΩ) is connected between the gate (G) and ground (S). This resistor ensures the MOSFET remains firmly off if the microcontroller pin is in a high-impedance state (e.g., during startup or reset).
3. Protection: Place the flyback diode in reverse bias across the load (anode to ground, cathode to the load's positive terminal). This diode clamps the voltage spike generated when the inductive load (motor) is switched off, protecting the MOSFET from damage.
4. Operation: When the microcontroller output is set to logic HIGH (5V or 3.3V), the MOSFET's gate is charged, turning the device on. This completes the circuit, allowing current to flow from the power supply, through the load, through the MOSFET, and to ground, thus activating the load. When the microcontroller output is set to LOW (0V), the gate is discharged through the pull-down resistor, turning the MOSFET off and de-energizing the load.
ICGOOODFIND: The Infineon IPD30N06S2L23ATMA3 stands out as an exemplary power switch due to its ultra-low R_DS(on) and high current handling in a compact package. Its logic-level compatibility makes it exceptionally easy to drive, while its robust construction ensures reliability in demanding environments like automotive systems. For designers seeking to maximize efficiency and power density, this MOSFET is a top-tier component choice.
Keywords:
1. OptiMOS™ Technology
2. Logic-Level MOSFET
3. Low On-Resistance (R_DS(on))
4. SuperSO8 Package
5. Application Circuit
